|
Abstract
|
The PbS nanocrystalline thin films were prepared by chemical bath deposition method on the Si(100)
substrate at different bath temperatures (25, 45 and 65 °C). The PbS nanocrystals were identified by XRD and TEM
techniques. The photoluminescence of Si(100) substrate and PbS nanocrystalline films deposited on Si(100) were
compared and the results revealed that the PbS nanocrystals altered and notably enhanced the emission features of the
Si(100) substrate. However, the shift of photoluminescence maximum emission wavelength of PbS nanocrystals with
bath temperature was investigated. Furthermore, the single-peak fitting using Gaussian function was employed for the
photoluminescence spectrum of PbS on Si(100) substrate.
|