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Abstract
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In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics.
It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered
through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or
anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence
of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-)
current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by
the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified
spin-current is the main achievement of this paper
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