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Abstract
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Intrinsic and Rashba spin{orbit interactions in strained graphene is studied within the tightbinding (TB) approach. Dependence of Slater{Koster (SK) parameters of graphene on strain are extracted
by fitting the ab initio band structure to the TB results. A generalized low-energy effective Hamiltonian
in the presence of spin-orbit couplings (SOCs) is proposed for strained graphene subjected to an external
perpendicular electric field. Dependence of the modified Rashba strength and other parameters of effective
Hamiltonian on the strain and electric field are calculated. In order to analyze the influence of the applied
strain on the electronic properties of the graphene, one must take into account the lattice deformation,
modifications of the hopping amplitudes and shift of the Dirac points. We find that using the strain it is
possible to control the strength of Rashba and intrinsic SOCs as well as energy gap at the shifted Dirac
points. Meanwhile, the strain slightly modifies the topology of low-energy dispersion around the Dirac
points. We describe the SOCs induced energy splitting as a function of strain.
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