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Abstract
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The reduced graphene oxide (rGO) and rGO-g-poly(3-dodecyl thiophene) (PDDT) precursors were applied in the active layers
of CH
3NH3PbI3 perovskite solar cells. The rGO-g-PDDT modifed perovskite devices represented the lower charge-transfer
resistance (31.8 Ω cm2), higher short circuit current density (20.86 mA/cm2) and thus the larger performance (14.07%)
compared with the pristine (74.2 Ω cm2, 17.90 mA/cm2, 11.10%) and rGO-incorporated devices (82.4 Ω cm2, 13.65 mA/
cm2, 8.00%). The grafted-rGO components improved the cell characteristics, whereas the bared rGO nanostructures ruined
them. The narrow distribution and thereby the high reproducibility and high performance in perovskite + rGO-g-PDDT
photovoltaics were attributed to the improved morphology and enhanced grain size (190 nm vs 400 nm), progressed optical
absorbance, and enhanced crystallinity of the CH3NH3PbI3 perovskites through the incorporation of rGO-g-PDDT modifers.
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