|
Abstract
|
In a planar FET two dielectric layers are placed on the
top and bottom of the graphene ribbon and a metallic gate is
located on its top at the channel region between two based on
graphene. The source and drain regions of graphene are highly ptype doped. A GNR field effect transistor with p-type source and
drain and n-type channel is modeled using the non-equilibrium
Green’s function formalism. According to our results, for Short
channels, the subthreshold current exhibits an oscillatory
behavior with the change of the gate voltage. As in other resonant
tunneling transistors, the modeled FET brings regions of negative
differential resistance. The discrete density of states in the channel
results from the constructed n-type channel island between p-type
source and drain with thin barriers formed by the energy gap
|