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Abstract
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Using the electron-hole symmetry of graphene nanoribbons, could provide carrier tunneling
between the conduction and valence bands. article usually includes an abstract, a concise summary
of the work covered at length in the main body of the article. By employing this property we have
numerically investigated GNR field effect transistors with p+-type source and drain in the presence
of a gate voltage-induced n-type channel using the non-equilibrium Green’s function formalism.
This device can be used as phototransistor.
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