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Abstract
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In this work, we investigate the effects of applying strain and transverse electric field on the geometrical pa
rameters and the electronic properties of (5,5) Stanene-based nanotube (SnNT) using density functional theory
(DFT) calculations. The results reveal that the geometrical parameters such as diameter and buckling parameter
affect by applying strain. Moreover, it is found that the studied nanotube exhibits direct and indirect band gap
under tensile and compressive strain, respectively. In addition, the band gap energy decreases by increasing the
compressive strain until the semiconductor to metal phase transition occurs. The external transverse electric field
leads to separate degenerated states in the band structure and reduces the band gap energy of nanotube. Tuning
the electric field induces semiconductor to metal transition. To further examine the electronic properties of (5,5)
SnNT, the effective mass of charge carriers is calculated under applied strains and transverse electric fields.
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