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Abstract
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The Faraday effect, which is the rotation of the light polarization plane by propagating inside a gyrotropic medium, plays a crucial role in designing and fabrication of many magneto-optical devices such as isolators, sensors, modulators, etc. The terahertz frequency spectra is one of the important regions that attract attention due to its applications as filters, but the tunability of these devices limits their suitability for practical applications. Demand for devices with the ability to control electromagnetic waves, MO materials such as semiconductors has been introduced into the millimeter devices due to their flexible optical properties. Among the semiconductor materials, Indium Arsenide (InAs) indicates considerable gyrotropic properties by applying an external magnetic field which leads to producing the MO effects such as Faraday rotations of the transmitted light from the InAs in the THz region. InAs is a semiconductor with a narrow band gap and high mobility of charge carriers, and its properties depend on temperature and magnetic field in the THz region. Embedding the Indium Arsenide in Photonic crystal structures is one of the ways to enhance the Fraday effect in the THz region.
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