مشخصات پژوهش

صفحه نخست /Engineering of the electronic ...
عنوان
Engineering of the electronic structure of graphene monoxide by out of plane and in-plane strains investigated by DFT
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
Graphene monoxide nano-sheet Band gap engineering DOS Density functional theory Mulliken populations
چکیده
The effect of the strain in thez-direction on the electronic properties and band-gap of graphene monoxide (GMO) nano-sheet was investigated by the first principles calculations. The strain was simulated via the oxygen–oxygen vertical distance in the range of 1.11 up to 3.31 Å fora¼124 and 1.05 up to 3.25 Å for a¼130 . The results showed that the energy gap in the band structure of GMO could be varied in the range of 0–1.71 eV. The studied properties were included density of states, band structure, molecular orbital and the variations resulting from strains. The Mulliken population analyses and charge density differences were also computed and discussed. The variations in the band gap and other properties were interpreted in terms of the orbital overlapping, orbital populations and geometrical variations.
پژوهشگران جابر جهان بین سردرودی (نفر اول)، انور جلالی نیا (نفر دوم)، علیرضا راستکار ابراهیم زاده (نفر سوم)