مشخصات پژوهش

A quantum hydrodynamic theory for high-frequency electron–hole Langmuir and acoustic-like oscillations as well as static charge shielding effects in arbitrarily doped semiconductors is presented. The model includes kinetic corrections to the quantum statistical pressure and to the quantum Bohm potential for partially degenerate electrons and holes at finite temperatures. The holes contribute to the oscillations and screening effects in semiconductors in a similar manner as real particles. The dielectric functions are derived in the high-frequency limit for wave excitations and in the low-frequency limit for the study of static screening. The dispersion relation for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N- and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.