مشخصات پژوهش

صفحه نخست /Electronic Behavior of Doped ...
عنوان
Electronic Behavior of Doped Graphene Nanoribbon Device: NEGF+DFT
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
graphene nanoribbon; partial atomic charge; NEGF; NDR; doping
چکیده
Quantum transport properties of pure and functioned infinite lead-connection region-lead system based on the zigzag graphene nanoribbon (2-zGNR) have been investigated. In this work the effect of the doping functionalization on the quantum transport of the 2-zGNR has been computationally studied. Also, the effect of the imposed gate voltages (-3.0, 0.0 and +3.0 V) and bias voltages 0.0 to 2.0 V have been studied. The results were presented as the current versus the bias voltage (I-Vb) curves with unique properties for per studied systems, showing one or two negative differential resistances (NDR). The NDR region was discussed and interpreted in the terms of the transmission spectrum and its integral inside of the corresponding bias window. Also, the partial atomic charge distribution in the center part of the system’s scattering region containing carbon atoms at the left and right sides of substituted atoms which are connected to substituted atoms has been investigated for different bias voltages.
پژوهشگران صادق افشاری (نفر اول)، جابر جهان بین سردرودی (نفر دوم)، حکیمه محمدپور (نفر سوم)