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Using the electron-hole symmetry of graphene nanoribbons, could provide carrier tunneling between the conduction and valence bands. article usually includes an abstract, a concise summary of the work covered at length in the main body of the article. By employing this property we have numerically investigated GNR field effect transistors with p+-type source and drain in the presence of a gate voltage-induced n-type channel using the non-equilibrium Green’s function formalism. This device can be used as phototransistor.